| 标题 |
Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO |
| 网址 | |
| DOI | |
| 其它 |
期刊:Physical review 作者:I. I. Fishchuk; A. Kadashchuk; Ajay Bhoolokam; A. de Jamblinne de Meux; Geoffrey Pourtois; et al 出版日期:2016-05-13 |
| 求助人 | |
| 下载 |
PDF的下载单位、IP信息已删除
(2025-6-4)