| 标题 |
On the Impact of Gate Switching Instability in Switching Performance for SiC Trench MOSFETs |
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| 其它 |
期刊:2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 作者:Jaume Roig; Rishi Krishna; Agnimitra Saha; Sotirios Maslougkas; Nikolas Masnicak; et al 出版日期:2026-05-24 |
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(2025-6-4)