| 标题 |
Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Applied Physics 作者:C. Merckling; N. Waldron; S. Jiang; W. Guo; N. Collaert; et al 出版日期:2014-01-17 |
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(2025-6-4)