| 标题 |
First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology |
| 网址 | |
| DOI |
10.1109/IEDM19573.2019.8993443
doi
|
| 其它 |
期刊:2019 IEEE International Electron Devices Meeting (IEDM) 作者:H. Honjo; T. V. A. Nguyen; T. Watanabe; T. Nasuno; C. Zhang; et al 出版日期:2019 |
| 求助人 | |
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(2025-6-4)