| 标题 |
Enhancing Hole Mobility in Monolayer WSe 2 p-Type Field-Effect Transistors via Process-Induced Compression |
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| DOI | |
| 其它 |
期刊:ACS Nano 作者:He Lin Zhao; Sheikh Mohd Ta-Seen Afrid; Dongyoung Yoon; Zachary Martin; Zakaria Islam; et al 出版日期:2026-06-11 |
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(2025-6-4)