| 标题 |
Depth profile of trap concentration induced by heavy ion irradiation in 4H-SiC Schottky barrier diode |
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| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:Xueqiang Yu; Xiaodong Xu; Hao Jiang; Lei Wu; Fengkai Liu; et al 出版日期:2025-07-14 |
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(2025-6-4)