| 标题 |
Charge-transfer interatomic potential to reproduce 30° partial dislocation movements for 4H-SiC in the surface vicinity and its application to BPD-TED conversion |
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| DOI | |
| 其它 |
期刊:Computational Materials Science 作者:Atsuo Hirano; Hiroki Sakakima; Asuka Hatano; Satoshi Izumi 出版日期:2023-10-29 |
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(2025-6-4)