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First-principle study on quintuple-atomic-layer Janus MTeSiX 2 (M= Mo, W; X=N, P, As) monolayers with intrinsic Rashba spin-splitting and Mexican hat dispersion |
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| 其它 |
期刊:Materials Science in Semiconductor Processing 作者:Amirhossein Rezavand; Nayereh Ghobadi 出版日期:2022-12-01 |
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(2025-6-4)