| 标题 |
1.2 kV 4H-SiC VDMOSFETs with Si-implanted Surface: Performance Enhancement and Reliability Evaluation |
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| DOI | |
| 其它 |
期刊:International Symposium on Power Semiconductor Devices and IC's 作者:J.-W. Hu; J. Jiang; P. Huang; C.-F. Huang; S.-W. Tang; et al 出版日期:2021-05-30 |
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(2025-6-4)