| 标题 |
High-throughput analysis of total electron yield and outgassing under EUV exposure for accelerated photoresist materials discovery |
| 网址 | |
| DOI |
10.1117/1.jmm.25.2.024602
doi
|
| 其它 |
期刊:Journal of Micro/Nanopatterning, Materials, and Metrology 作者:B. Luttgenau; Honggu Im; Meng Zhang; Kas Andrle; Qi Zhang; et al 出版日期:2026-04-01 |
| 求助人 | |
| 下载 |
PDF的下载单位、IP信息已删除
(2025-6-4)