| 标题 |
The influence of oxygen partial pressure on the performance and stability of Ge-doped InGaO thin film transistors |
| 网址 | |
| DOI |
10.1016
doi
|
| 其它 |
期刊:Ceramics International 作者:Kwang‐Ho Lee; Kyung‐Chul Ok; Hidong Kim; Jin‐Seong Park 出版日期:2013-10-04 |
| 求助人 | |
| 下载 |
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(2025-6-4)