| 标题 |
Tuning resistive switching properties of WO3−x-memristors by oxygen vacancy engineering for neuromorphic and memory storage applications |
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| DOI | |
| 其它 |
期刊:Journal of Physics D 作者:Krishna Rudrapal; Maitreyo Biswas; Biswajit Jana; A. Venimadhav; Ayan Roy Chaudhuri 出版日期:2023-03-08 |
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(2025-6-4)