| 标题 |
专利、报告等 Improved Performance of the Al2O3Protected HfO2TiO2 Base Layer with a Self-Assembled CH3NH3PbI3 Heterostructure for Extremely Low Operating Voltage and Stable Filament Formation in Nonvolatile Resistive Switching Memory |
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| DOI | |
| 其它 |
期刊: 作者: 出版日期:2022-11-03 |
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(2025-6-4)