| 标题 |
Oxygen vacancy enriched defect engineering in Bi2MoO6 enabled sub-ppm nitrogen dioxide sensing through V doping |
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| DOI | |
| 其它 |
期刊:Sensors and Actuators B: Chemical 作者:T. Ragavi; S. Harish; M. Krishnamohan; M. Navaneethan 出版日期:2026 |
| 求助人 | |
| 下载 |
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(2025-6-4)