| 标题 |
1.2 kV 3D Quasi-Planar Trench SiC MOSFET with P-Body Layer as Trench Protection |
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期刊:2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 作者:Mansha Kansal; Iulian Nistor; Kyrylo Melnyk; Giuseppe Capasso; Alessandro Borghese; et al 出版日期:2026-05-24 |
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(2025-6-4)