| 标题 |
Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy |
| 网址 | |
| DOI | |
| 其它 |
期刊:Microelectronic Engineering 作者:Thomas Kaltsounis; Helge Haas; Matthieu Lafossas; S. Torrengo; Vishwajeet Maurya; et al 出版日期:2023-02-20 |
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(2025-6-4)