| 标题 |
Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga2O3 Films through Plasma-Enhanced Technology |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Physical Chemistry Letters 作者:Huaile He; Chao Wu; Haizheng Hu; Shun-Li Wang; Fabi Zhang; et al 出版日期:2023-07-11 |
| 求助人 | |
| 下载 | 该求助完结已超 24 小时,文件已从服务器自动删除,无法下载。 |
PDF的下载单位、IP信息已删除
(2025-6-4)