| 标题 |
AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric |
| 网址 | |
| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:Tsung-Han Yang; Jesse M. Brown; Kai Fu; Jingan Zhou; Kevin A. Hatch; et al 出版日期:2021-02-15 |
| 求助人 | |
| 下载 |
PDF的下载单位、IP信息已删除
(2025-6-4)