| 标题 |
Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescence |
| 网址 | |
| DOI |
10.1117/1.jmm.22.3.034001
doi
|
| 其它 |
期刊:Journal of micro/nanopatterning, materials, and metrology 作者:Janusz Bogdanowicz; Yusuke Oniki; Karine Kenis; Pallavi Puttarame Gowda; Hans Mertens; et al 出版日期:2023-08-02 |
| 求助人 | |
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(2025-6-4)