光致发光
量子阱
材料科学
光电子学
铟
调制(音乐)
铟镓氮化物
电致发光
拉伤
发光
氮化镓
激光器
光学
图层(电子)
纳米技术
物理
内科学
医学
声学
作者
Yachen Wang,Jing Yang,Feng Liang,Zongshun Liu,Degang Zhao
标识
DOI:10.1016/j.jlumin.2023.120335
摘要
The strain modulation mechanism of green InGaN quantum wells (QWs) was investigated by designing and growing additional InGaN/GaN strain modulation layers with different Indium (In) content and structures. Electroluminescence (EL) measurements were employed to analyze the strain in InGaN QWs by checking the change of EL peak energy with injection current. The experimental results suggest that proper In content in the InGaN strain modulation layer is required to reduce the compression strain in multiple quantum wells (MQWs). Meanwhile, the material quality and flatness of the pre-grown modulation layer may significantly affect the homogeneity and the strain state of MQWs. Temperature-dependent photoluminescence (TDPL) and micro-luminescence were measured to characterize the optical properties of MQWs prepared with strain modulation layers. By carefully modulating the strain in QWs, the InGaN/GaN green multiple quantum wells (MQWs) exhibit higher In incorporation and uniform luminescence.
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