Electronic doping induced increase in coercive field of sliding ferroelectric 1T′-ReS2 multilayers

The authors reveal here that sliding ferroelectrics display a distinct doping-dependent coercive field behavior, diverging from conventional displacement-type ferroelectrics. Employing 1${T}^{\ensuremath{'}}$-ReS${}_{2}$ multilayers, they demonstrate that sulfur vacancy density -- controlled through annealing atmosphere -- directly regulates charge doping, amplifying the coercive field by as much as 870 kV/cm with increased vacancy concentration. Combined experimental and theoretical analyses reveal that increased vacancy densities elevate the energy barrier for polarization switching. This study highlights the unique mechanistic framework of sliding ferroelectrics and proposes innovative strategies for their integration into next-generation electronic technologies.