Capturing Configurable Self-Rectifying Behaviors: Multi-Interfaced Oxide-Based Resistive Random Access Memory

In this study, multi-interfaced oxide-stacked resistive random-access memory (RRAM) with self-rectifying behaviors is presented. Self-rectifying characteristic, or called “nonlinearity,” is essential on the stand-alone RRAM to be implemented in high density crossbar array without integrating the additional selector. To modify the nonlinearity for power efficiency, adding additional material interfaces is considered as an approach to tune the geometric factors in the nanometer-scale microstructure. The trilayer device of HfO x (4 nm)/ SiO x (9 nm)/HfO x (4 nm) layers shows a good memory window (2 × 10 2 ) and nonlinearity (>10) under reduced compliance current limit with balanced bipolar operations as compared to the bilayer device, which provides a better solution for high density nonvolatile memory storage with lower power consumption, and potential new computing applications.