电容器
金属
电容
材料科学
金属绝缘体金属
氧化物
光电子学
冶金
电气工程
电极
化学
电压
工程类
物理化学
作者
Anjali Bharti,Bindu Bhardwaj,Richa Yadav,Vandana Niranjan,Sylvia Keisham,Komal Duggal
标识
DOI:10.1109/sparc61891.2024.10829176
摘要
This review distinguishes the working principles, fabrication techniques, and various parameters such as capacitance values, voltages, fabrication cost, area, capacitance density, and leakage currents of metal-oxide-metal (MOM) and metal-insulator-metal (MIM) capacitors. These days, because of their benefits and affordability, these capacitors are utilized in chip design. MOM capacitors are manufactured and frequently interdigitated with metal contacts. MIM capacitors are constructed differently than other capacitors since they are mostly made of distinct metal layers separated by a dielectric layer. The cost of MIM capacitors is more than MOM capacitors but MOM capacitors are mostly limited to use. By comparing, we showed that the two capacitors’ performances were similar in the preliminary analysis, suggesting that MOM capacitors might eventually partially replace MIM capacitors in semiconductor production.
科研通智能强力驱动
Strongly Powered by AbleSci AI