Analysis of breakdown characteristics of GaN-based HEMT by subdividing current components

Abstract In this study, we provided a detailed analysis of HEMTs three-terminal leakage current curves to elucidate the devices breakdown characterization. A comprehensive breakdown curves is collected, and reasonable explanations are offered for phenomena observed in these curves, which challenge conventional assumption regarding the source current I S being buffer leakage current. The leakage current trends of drain current I D , gate current I G and source current I S corresponding to each other under off-state conditions are analyzed in detail within the measurement range. Our findings highlight the significance of gate-side leakage, which cannot be disregarded when investigating the HEMT breakdown mechanism. The characterization method of the breakdown mechanism was optimized by subdividing the leakage current components, and the breakdown mechanism of the HEMT device was revealed by leakage current components.