自旋(空气动力学)
加法器
磁化
扭矩
材料科学
逻辑门
磁滞
凝聚态物理
光电子学
轨道(动力学)
计算机科学
电气工程
物理
磁场
工程类
量子力学
CMOS芯片
热力学
航空航天工程
作者
Xiang Han,Yibo Fan,Dong Wang,Wei Wang,Lihui Bai,Yanxue Chen,Shishen Yan,Yufeng Tian
摘要
A simple, reliable, and electrically controllable way to develop complementary spin–orbit logic devices is highly desired. In this work, controllable field-free spin–orbit torque (SOT) switching is demonstrated in the Pt/IrMn/Co/Ru/CoPt/CoO/MgO heterojunction at room temperature, which makes it an attractive building block for complementary spin logic. By applying current pulses along two orthogonal directions, both the in-plane exchange bias at the IrMn/Co interface and the perpendicular magnetization switching of the CoPt layer can be well controlled. Using this controllable SOT switching, multiple spin logic operations and a spin logic half-adder are obtained. These results indicate that controllable SOT switching could provide a potentially applicable way toward efficient spin logic and in-memory computing devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI