Infrared Photodetectors Based on SnS2 for Silicon Photonic Integrated Circuits

The integration of two-dimensional (2D) materials with silicon waveguides exhibits exceptional properties for the construction of optoelectronic devices. However, it is challenging with photodetectors based on wide-bandgap 2D materials to achieve high response in the infrared band. In this work, we demonstrate a photodetector by heterogeneously integrating a multilayer SnS2 crystal flake on a silicon microring resonator, achieving a response at 1550 nm due to the bolometric effect and light–matter interaction of 2D material. The photodetector is realized in a two-terminal in-plane electrodes configuration without applying external gating; the device has a strong responsivity of 0.56 A/W at 1550 nm, and shows a minimum dark current of 1.83 nA. This work proposes a new mechanism of utilizing 2D materials on photonic integrated circuits for photodetection, offering new opportunities for the development of photodetectors for optical communications and sensing applications.