Synthesis of 2D Semiconductor Lateral Patterned Heterostructures Through Carving and Follow‐Up Robust Epitaxial Growth Approach

Abstract Precise control over the spatial distribution of chemical composition and electronic structure in two‐dimensional (2D) semiconductors is essential for the development of next‐generation integrated circuits. However, fabricating 2D lateral patterned heterostructures with atomically sharp interfaces and high spatial periodicity remains a significant challenge. Herein, this work reports a general strategy to synthesize 2D semiconductor lateral patterned heterostructures through carving of 2D semiconductor single crystal and the follow‐up robust epitaxial growth approach. Using the high‐speed laser carving (HSLC) technique, this work obtains precisely controlled 2D semiconductor material patterns with clean edges, which are used as a robust template for laterally epitaxial growth to produce 2D lateral periodic heterostructures, heterostructure crossbar arrays and other complex patterned heterostructures. Systematic microscopic and spectral characterization reveal that heterostructures have atomically sharp interlines. The high periodicity of these heterostructures facilitates scalable device integration, providing a practical route toward large‐area 2D electronic circuits. By constructing functional electronic components such as p‐n diode and complementary metal oxide semiconductor (CMOS) inverters arrays, this work demonstrates the potential of these heterostructures for monolithic circuit applications. This technique offers a new idea for micro/nano machining of 2D materials and lays a foundation for large‐scale integrated circuits based on 2D semiconductors.