外延
基质(水族馆)
图层(电子)
硅
材料科学
光电子学
肖特基势垒
二极管
肖特基二极管
硼
接口(物质)
污染
化学
纳米技术
复合材料
地质学
润湿
有机化学
海洋学
生物
坐滴法
生态学
作者
D. Pal,David Hoag,Margaret Barter
标识
DOI:10.1088/0268-1242/27/5/055007
摘要
Unusual negative resistance characteristics were observed in low barrier HMIC (Heterolithic Microwave Integrated Circuit) silicon Schottky diodes with HF (hydrofluoric acid)/IPA (isopropyl alcohol) vapor clean prior to epitaxial growth of silicon. SIMS (secondary ion mass spectroscopy) analysis and the results of the buried layer structure confirmed boron contamination in the substrate/epitaxial layer interface. Consequently the structure turned into a thyristor like p-n-p-n device. A dramatic reduction of boron contamination was found in the wafers with H20/HCl/HF dry only clean prior to growth, which provided positive resistance characteristics. Consequently the mean differential resistance at 10 mA was reduced to about 8.1 ?. The lower series resistance (5.6?5.9 ?) and near 1 ideality factor (1.03?1.06) of the Schottky devices indicated the good quality of the epitaxial layer.
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