记忆电阻器
计算机科学
电压
信号(编程语言)
电子工程
电气工程
工程类
程序设计语言
作者
Sung Mo Kang,Dong-Uk Choi,Jason K. Eshraghian,Peng Zhou,Jieun Kim,Bai‐Sun Kong,Xiaojian Zhu,Ahmet Şamil Demirkol,Alon Ascoli,Ronald Tetzlaff,Wei Lü,Leon O. Chua
出处
期刊:IEEE Transactions on Circuits and Systems I-regular Papers
[Institute of Electrical and Electronics Engineers]
日期:2021-11-17
卷期号:68 (12): 4837-4850
被引量:44
标识
DOI:10.1109/tcsi.2021.3126555
摘要
We present and experimentally validate two minimal compact memristive models for spiking neuronal signal generation using commercially available low-cost components. The first neuron model is called the Memristive Integrate-and-Fire (MIF) model, for neuronal signaling with two voltage levels: the spike-peak, and the rest-potential. The second model MIF2 is also presented, which promotes local adaptation by accounting for a third refractory voltage level during hyperpolarization. We show both compact models are minimal in terms of the number of circuit elements and integration area. Using the MIF and MIF2 models, we postulate the design of a memristive solid-state brain with an estimation of its surface area and power consumption. Analytical projections show that a memristive solid-state brain could be realized within (i) the surface area of the median human brain, 2,400cm2, (ii) the same volume of the median human brain, and (iii) a total power budget of approximately 20 W using a 3.5 nm technology. Distinct from the past decade of memristive neuron literature, our benchmarks are attained using generic commercially available memristors that are reproducible using off-the-shelf components. We expect this work can promote more experimental demonstrations of memristive circuits that do not rely on prohibitively expensive fabrication processes.
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