Compressive properties and microstructure evolution of sintered nano-silver

Abstract In this work, the compressive properties of sintered nano-silver applied to the third generation semiconductor at room temperature are tested at a loading rate of 10 -2 s -1 . The compressive stress-strain curve shows obvious elastic and plastic stage, and with the failure of the pore wall and sintering neck, the damage accumulates gradually until failure. The microstructure is analyzed statistically by scanning electron microscope. A finite element model for porous structure is developed by matching scanning electron microscope analysis. The elastic modulus of pore wall and sintering neck is obtained by combining the macro experimental data with the Ashby model. The local failure process of sintered nano-silver is simulated numerically. It is noted that the failure path is determined by large pore and pore spacing.