与非门
闪存
计算机科学
闪光灯(摄影)
可靠性(半导体)
存水弯(水管)
闪存文件系统
电荷陷阱闪光灯
计算机硬件
计算机存储器
半导体存储器
嵌入式系统
逻辑门
功率(物理)
算法
物理
气象学
光学
量子力学
作者
Weihua Liu,Fei Wu,Xiang Chen,Meng Zhang,Yu Wang,Xiangfeng Lu,Conghua Xie
出处
期刊:ACM Transactions on Storage
[Association for Computing Machinery]
日期:2022-03-10
卷期号:18 (2): 1-25
被引量:4
摘要
Solid-state drive (SSD) gradually dominates in the high-performance storage scenarios. Three-dimension (3D) NAND flash memory owning high-storage capacity is becoming a mainstream storage component of SSD. However, the interferences of the new 3D charge-trap (CT) NAND flash are getting unprecedentedly complicated, yielding to many problems regarding reliability and performance. Alleviating these problems needs to understand the characteristics of 3D CT NAND flash memory deeply. To facilitate such understanding, in this article, we delve into characterizing the performance, reliability, and threshold voltage ( V th ) distribution of 3D CT NAND flash memory. We make a summary of these characteristics with multiple interferences and variations and give several new insights and a characterization methodology. Especially, we characterize the skewed ( V th ) distribution, ( V th ) shift laws, and the exclusive layer variation in 3D NAND flash memory. The characterization is the backbone of designing more reliable and efficient flash-based storage solutions.
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