中间层
耦合损耗
材料科学
插入损耗
通过硅通孔
GSM演进的增强数据速率
光电子学
光子学
光学
输电线路
硅光子学
硅
电子工程
图层(电子)
光纤
工程类
电气工程
电信
物理
蚀刻(微加工)
复合材料
作者
Qi Zheng,Peng Yang,Haiyun Xue,Huimin He,Rui Cao,Fengwei Dai,Siwei Sun,Fengman Liu,Qidong Wang,Liqiang Cao,Lijun Chen,Xuyan Sun,Peng Sun
标识
DOI:10.1109/jlt.2022.3188362
摘要
3D integration photonic interposer is becoming popular in the field of co-packaging optics (CPO). In this paper, we integrate the edge coupler and through silicon via (TSV) into the silicon interposer. Different high-frequency transmission lines are designed, analyzed and simulated. The measured results and the simulation have a good correspondence. The high frequency transmission lines, which consist of 10 μm × 100 μm TSVs and two redistribution layer (RDL) lines of 100 μm on the top layer and one 100 μm RDL line on the bottom layer, shows perfect insertion loss less than 0.35 dB @67 GHz. In addition, the 56GBaud (112Gbps) eye diagram is tested and shows excellent transmission quality. Edge couplers are designed and fabricated by packaging process. The coupling loss of coupler is less than 1.7 dB/facet. The 3D optical package module based on the active optical interposer has also been realized and verified.
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