(Invited) Design and Simulation of a Novel Shock Accelerometer Based on Giant Piezoresistance Effect

The design of a novel eight-beam uniaxial shock accelerometer is presented. This new multi-beam structure has a advantage of high anti-disturbance capability. The designed measurement rang of the sensor is 150,000g and the sensitivity is 23.4μV/g, which is about 20 times higher than conventional sensors of same measurement rang due to the exploiting of the giant piezoresistance effect in silicon nanowires. This achievement opens up new developments in the area of shock experiments where the high overload capability and high sensitivity are both needed.