MOSFET
材料科学
短路
光电子学
电气工程
电压
工程物理
电子工程
工程类
晶体管
作者
Hideyuki Hatta,Takaaki Tominaga,Shiro Hino,Naruhisa Miura,Shingo Tomohisa,Satoshi Yamakawa
出处
期刊:Materials Science Forum
日期:2018-06-05
卷期号:924: 727-730
被引量:28
标识
DOI:10.4028/www.scientific.net/msf.924.727
摘要
This work reports an SiC-MOSFET which replaces a part of the channel resistance with an additional embedded resistance, called a source resistance ( R s ). MOSFETs with R s have higher resistance during short circuit compared with MOSFETs without R s and suppress short-circuit currents. An improvement of the trade-off relationship between short-circuit capability and on-resistance was obtained with MOSFETs including embedded R s .
科研通智能强力驱动
Strongly Powered by AbleSci AI