铁磁性
凝聚态物理
磁化动力学
材料科学
无定形固体
超短脉冲
皮秒
磁化
矫顽力
各向异性
薄膜
联轴节(管道)
物理
激光器
光学
纳米技术
磁场
结晶学
化学
量子力学
冶金
作者
Alejandro Ceballos,Akshay Pattabi,Amal El‐Ghazaly,Sergiu Ruta,Christian P. Simon,Richard F. L. Evans,Thomas Ostler,R.W. Chantrell,Ellis Kennedy,Mary Scott,Jeffrey Bokor,F. Hellman
出处
期刊:Physical review
[American Physical Society]
日期:2021-01-25
卷期号:103 (2)
被引量:58
标识
DOI:10.1103/physrevb.103.024438
摘要
Ultrafast control of the magnetization in ps timescales by fs laser pulses offers an attractive avenue for applications such as fast magnetic devices for logic and memory. However, ultrafast helicity-independent all-optical switching (HI-AOS) of the magnetization has thus far only been observed in Gd-based, ferrimagnetic amorphous (\textit{a}-) rare earth-transition metal (\textit{a}-RE-TM) systems, and a comprehensive understanding of the reversal mechanism remains elusive. Here, we report HI-AOS in ferrimagnetic \textit{a}-Gd$_{22-x}$Tb$_x$Co$_{78}$ thin films, from x = 0 to x = 18, and elucidate the role of Gd in HI-AOS in \textit{a}-RE-TM alloys and multilayers. Increasing Tb content results in increasing perpendicular magnetic anisotropy and coercivity, without modifying magnetization density, and slower remagnetization rates and higher critical fluences for switching but still shows picosecond HI-AOS. Simulations of the atomistic spin dynamics based on the two-temperature model reproduce these results qualitatively and predict that the lower damping on the RE sublattice arising from the small spin-orbit coupling of Gd (with $L = 0$) is instrumental for the faster dynamics and lower critical fluences of the Gd-rich alloys. Annealing \textit{a}-Gd$_{10}$Tb$_{12}$Co$_{78}$ leads to slower dynamics which we argue is due to an increase in damping. These simulations strongly indicate that acounting for element-specific damping is crucial in understanding HI-AOS phenomena. The results suggest that engineering the element specific damping of materials can open up new classes of materials that exhibit low-energy, ultrafast HI-AOS.
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