Generalized Constant Current Method for Determining MOSFET Threshold Voltage

A novel method for extracting threshold voltage and substrate effect\nparameters of MOSFETs with constant current bias at all levels of inversion is\npresented. This generalized constant-current (GCC) method exploits the\ncharge-based model of MOSFETs to extract threshold voltage and other\nsubstrate-effect related parameters. The method is applicable over a wide range\nof current throughout weak and moderate inversion and to some extent in strong\ninversion. This method is particularly useful when applied for MOSFETs\npresenting edge conduction effect (subthreshold hump) in CMOS processes using\nShallow Trench Isolation (STI).\n