Simulation and Fabrication of a-IGZO Flexible vertical TFTs

The aim of this thesis is to design, simulate, fabricate and characterize Flexible Vertical Thin Film Transistor (TFT). Flexible Vertical Thin Film Transistors would allow to develop the next generation of high speed flexible circuits, due to their small channel length. Despite of this, to the date, no Flexible Vertical TFTs with an Amorphous Indium Gallium Zinc Oxide (a-IGZO) channel have been fabricated. For this reason, the development and design of a flexible Vertical TFT with good electrical characteristics represents the initial step for further development of high frequency flexible electronics