材料科学
薄膜晶体管
原子层沉积
光电子学
晶体管
铟
阈值电压
镓
无定形固体
栅氧化层
氧化物
纳米技术
薄膜
图层(电子)
电压
电气工程
结晶学
冶金
化学
工程类
作者
Jae Seok Hur,Min Jae Kim,Seong Hun Yoon,Hagyoung Choi,Chi Kwon Park,Seung Hee Lee,Min Hee Cho,Bong Jin Kuh,Jae Kyeong Jeong
标识
DOI:10.1021/acsami.2c13489
摘要
In this paper, the feasibility of an indium-gallium oxide (In2(1-x)Ga2xOy) film through combinatorial atomic layer deposition (ALD) as an alternative channel material for back-end-of-line (BEOL) compatible transistor applications is studied. The microstructure of random polycrystalline In2Oy with a bixbyite structure was converted to the amorphous phase of In2(1-x)Ga2xOy film under thermal annealing at 400 °C when the fraction of Ga is ≥29 at. %. In contrast, the enhancement in the orientation of the (222) face and subsequent grain size was observed for the In1.60Ga0.40Oy film with the intermediate Ga fraction of 20 at. %. The suitability as a channel layer was tested on the 10-nm-thick HfO2 gate oxide where the natural length was designed to meet the requirement of short channel devices with a smaller gate length (<100 nm). The In1.60Ga0.40Oy thin-film transistors (TFTs) exhibited the high field-effect mobility (μFE) of 71.27 ± 0.98 cm2/(V s), low subthreshold gate swing (SS) of 74.4 mV/decade, threshold voltage (VTH) of -0.3 V, and ION/OFF ratio of >108, which would be applicable to the logic devices such as peripheral circuit of heterogeneous DRAM. The in-depth origin for this promising performance was discussed in detail, based on physical, optical, and chemical analysis.
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