低压差调节器
电容器
跌落电压
电容
CMOS芯片
噪音(视频)
分压器
电气工程
次声
材料科学
电压调节器
调节器
低压
光电子学
电阻式触摸屏
电压
电子工程
物理
计算机科学
工程类
声学
化学
电极
图像(数学)
基因
人工智能
量子力学
生物化学
作者
Lantao Wang,Running Guo,Johannes Bastl,Jonas Meier,Michael Hanhart,Tim Lauber,Alexander Meyer,Ralf Wunderlich,Stefan Heinen
标识
DOI:10.1109/iscas48785.2022.9937427
摘要
This paper presents a low-noise low-dropout regulator (LNLDO) implemented in a 28 nm technology. The LNLDO features a two-stage architecture, using a low-pass filter with a very low cut-off frequency to separate the regulation loop and the noisy devices such as resistive divider and bandgap reference. Supplied by a 1.5 V-1.8 V input voltage, the LNLDO is able to provide a stable output voltage ranging from 0.73 V to 1.71 V, with a current supply ability from 0 to 35 mA. An on-chip capacitance enhancer is used to stabilize the regulation loop without an additional external capacitor. The RMS noise from 10 Hz to 100 kHz of the LNLDO is below 20μV.
科研通智能强力驱动
Strongly Powered by AbleSci AI