拓扑序
量子相变
费米子
拓扑绝缘体
相变
凝聚态物理
量子
量子临界点
拓扑(电路)
物理
绝缘体(电)
金属-绝缘体过渡
理论物理学
材料科学
量子力学
光电子学
工程类
电阻率和电导率
电气工程
作者
Lirong Wang,Yefeng Li,Lei Jin,Wei-Wang Yu,Xiaoming Zhang,Guodong Liu,Ying Liu,Tingting Zhang
出处
期刊:Physical review
[American Physical Society]
日期:2025-01-02
卷期号:111 (3)
被引量:3
标识
DOI:10.1103/physrevb.111.035102
摘要
The exploration of topological quantum phases and their transitions has become a focus of intense research. In this paper, we introduce a family of two-dimensional (2D) metal-organic frameworks (MOFs) that host various emergent 2D fermions and second-order topological insulators (SOTIs) while also exhibiting strain-tunable quantum phase transitions. Using first-principles calculations, we demonstrate that these MOFs can exhibit either a narrow-band-gap semiconductor or a zero-band-gap semimetal state, with three key bands in the low-energy region. Importantly, we find that applying biaxial strain can induce a semiconductor-to-semimetal quantum phase transition or vice versa. We further reveal that the semiconductor phase may possess nontrivial properties, including corner states, indicative of a second-order topological phase. At the critical strain point, a 2D triple point emerges, which transitions into a double-Weyl-fermion state under additional strain. We also construct effective models to describe these emergent 2D fermions. Our findings highlight the potential of MOFs as a versatile platform for studying quantum phases, emergent fermions, and SOTIs, paving the way for future applications in quantum materials and nanoscale technologies.
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