Study of damage mechanism on single crystal 4H-SiC surface layer by picosecond laser modification (PLM)

The stable structure, high hardness, and brittleness of single-crystal 4H-SiC present challenges in achieving efficient and damage-free polishing processing. Ultra-short pulsed laser-induced surface modification provides a new solution to enhance the manufacturability of 4H-SiC. This paper aims to investigate the underlying mechanism of the picosecond laser-induced surface structural changes in 4H-SiC and the process of material removal from solid to vapour, elucidating the interaction mechanism between picosecond laser and 4H-SiC. A temperature gradient distribution model for picosecond laser irradiation on 4H-SiC was built to reveal the formation mechanism of subsurface crack damage. The results show that a combination of phase explosion and thermal effects controlled picosecond laser-modified 4H-SiC surfaces deposited spherical SiO2 particles and the process. The study demonstrates that the cracking behaviour in the subsurface of picosecond laser-modified SiC predominantly occurs in the recast region. The fundamental cause of cracking is attributed to the tensile stresses generated by thermal effects and the volumetric changes in the molten material resulting from the overlapping of neighbouring spots in alternating hot–cold cycles. The nanoindentation demonstrated that laser modification can effectively enhance the machinability of SiC. The findings of this study can provide a theoretical basis for efficient non-destructive machining of hard and brittle materials.