Stability Challenges for a Highly Efficient Perovskite/Silicon Tandem Solar Cell‐ A Review

As the balance of system (BOS) cost of PV installations governs the competitiveness of the photovoltaic device market, next‐generation solar cells desire substantially enhanced power conversion efficiencies (PCE). The single‐junction perovskite and Si solar cells have demonstrated PCEs beyond 26 % and 25 %, respectively. A rationale approach to circumvent this challenging milestone of higher PCEs is to complement wide‐bandgap top perovskites with market‐driven high‐efficiency Si bottom solar cells to realize the highly efficient perovskite‐Si tandem solar cell. The tandem configuration has crossed the threshold posed by the S‐Q limit by demonstrating the 33.9 % PCE. However, the unresolved issues in the perovskite community from a stability perspective pose challenges for realizing highly efficient and stable perovskite‐Si tandem solar cells. This review highlights the current status of perovskite‐Si TSC from a stability perspective besides elucidating the degradation mechanisms at the perovskite‐Si at the cell and module level. A highly efficient perovskite‐Si tandem solar cell needs to be optimized keeping view the specific requirements for tandem configuration like strain, current matching, and band gap optimization between the top perovskite and bottom Si subcell.A variety of stressors affecting the efficiency of the perovskite‐Si module, namely reverse bias and hot spot formation, potential induced degradation (PID), and delamination, highlight valuable insight to develop future strategies for the perovskite‐Si TSC. Stability regimes for the single‐junction perovskite solar cell can provide the essential stepping stone. However, modified stability regimes can incorporate the unique aspects of tandem architecture to realize highly efficient and stable perovskite‐Si tandem solar cells. This article is protected by copyright. All rights reserved.