材料科学
氢氧化物
铝
图层(电子)
Boosting(机器学习)
化学工程
无机化学
纳米技术
化学
冶金
计算机科学
工程类
机器学习
作者
Waka Matsumoto,Takashi Fukushima,Satoshi Heguri,Syuji Fujii,Shinya Higashimoto
摘要
Modifying BiVO 4 with Al(OH) 3 layers improved its PEC properties due to an increase of surface wettability. The strong interfacial interaction with H 2 O played a vital role in efficient charge carrier transportation on the BiVO 4 interface.
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