Indium-Doped Crystals of SnSe2

Bulk crystals of undoped and In-doped (on the order of 1%) SnSe2 were synthesized using a solid-state temperature-gradient method and characterized by diffuse reflection, Raman scattering, ARPES and STM studies. An n-to-p crossover was observed as a function of the indium concentration in Hall measurements at 300 K, but the Seebeck coefficient is n-type at that temperature for all studied indium concentrations. The measured resistivity at 300 K reaches a maximum at the minimum carrier concentration. Our results suggest a multiband semiconducting nature for doped SnSe2, which provides insight into the exploration of enhanced thermoelectric performance and exotic electric behavior.