Mixed tin-lead perovskite nanorod-based resistive memory device

• Perovskite nanorods synthesis by intercalation of long-chain organic cations. • Use of oleylammonium organic cation into bulk methylammonium tin-lead bromides as cations. • Poly(methyl methacrylate) encapsulated nanorods are excellent memristor active layer. SET voltage lowered to ∼ 0.5 V and ON OFF current ratios enhanced to ∼10 5 . Stable mixed cation (tin-lead) perovskite nanorods results from intercalating long-chain organic ligand- oleylamine into perovskite 3D (CH 3 NH 3 PbBr 3 ) structure using the ligand-assisted re-precipitation method. A spin-coated nanorod film works as an active layer for resistive memory devices by sandwiching nanorod film between two electrodes with a switching voltage of 1.4 V. A poly(methyl methacrylate) passivated nanorod film results in better resistive memory properties by exploiting advantages of both insulating poly(methyl methacrylate) and semiconducting perovskite nanorods. The passivation enhances the stability of the device, protecting electrodes from reacting with the perovskite layer. The structure lowers the current in the high resistance state, increasing the ON OFF current ratio to ∼ 10 5 . The device exhibits non-volatile rewritable resistive switching characteristics with a switching voltage ∼ 0.5 V. The conduction mechanism involved in the switching action is explained from the relation between current-voltage as space charge limited conduction.