材料科学
薄脆饼
椭圆偏振法
光电子学
计量学
外延
显微镜
光学
干扰(通信)
半导体
白光
光学显微镜
薄膜
纳米技术
扫描电子显微镜
计算机科学
复合材料
图层(电子)
计算机网络
频道(广播)
物理
作者
Elena Ermilova,Matthias Weise,Andreas Hertwig
摘要
Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructive detection, classification, and characterisation of defects in 4H–SiC homoepitaxial layers on 4H–SiC substrates. Ellipsometry measurement results are confirmed by WLIM. They can be successfully applied for wafer characterisation already during production of SiC epilayers and for subsequent industrial quality control.
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