Next-Generation Superjunction Power Device with Trench Sidewall Doping

This study proposes a novel Trench Sidewall Doping (TSD) Superjunction (SJ) architecture utilizing Plasma Doping (PLAD) technology to address scalability limitations in traditional SJ fabrication. TCAD simulations demonstrate its scalability across all voltage classes, reducing cell pitch while maintaining charge balance. This enables significantly lower specific on- resistance (Rsp), near the Fujihira's SJ limit. Silicon fabrication results validate the feasibility of the TSDSJ approach. The design achieves p-column miniaturization to 0.1 μm, the smallest in existing SJ technology. PLAD's conformal trench sidewall doping simplifies the manufacturing process, replaces traditional SJ fabrication methods, and supports the SJ charge balance principle in high aspect ratio (AR) trenches. The proposed design's pitch reduction and low Rsp offer a transformative solution for high-performance and cost-effective power device applications.