Revealing the influence of annealing on mid- and long-wave infrared dual-color HgCdTe p–n junctions at the nanometer scale

for the two samples, respectively. The widths of the p-n junction were determined at temperatures ranging from 233 K to 293 K. The decrease in junction width on the MWIR side of the 410 °C-annealed sample mainly originated from the increase in the intrinsic carrier concentration with temperature. In contrast, the junctions in the sample annealed at 380 °C showed considerably greater shrinkage, which signifies the influence of dopants while approaching room temperature. The discovery of microscopic electrical properties in this study has been partially verified through Hall measurements, contributing to the evaluation of the doping process and optimizing the performance of p-n junctions.