The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure

Abstract In this study, we fabricated p-type diamond Schottky barrier diodes (SBD) and performed selective B doping for the p-type channel and Ohmic region by double ion implantation. SBD were redesigned in the configuration and shape of Ohmic and Schottky electrodes to improve device characteristics. The fabricated device exhibited a rectification ratio of approximately 2400 because of decreasing the parasitic resistance to 2.7 × 10 7 Ω and the ideality factor to 2.7. The Schottky barrier height was obtained to be 1.04 eV. It is indicated that the diamond SBD fabricated only by B ion implantation is improved by refinement of the electrode structure.