Chemically modified surface of silicon nanostructures to enhance hydrogen uptake capabilities

材料科学 氢气储存 化学工程 解吸 表面粗糙度 纳米技术 多孔硅 打赌理论 吸附 蚀刻(微加工) 复合材料 图层(电子) 化学 有机化学 光电子学 工程类
作者
Rama Chandra Muduli,Paresh Kale
出处
期刊:International Journal of Hydrogen Energy [Elsevier BV]
卷期号:48 (96): 37819-37833 被引量:10
标识
DOI:10.1016/j.ijhydene.2022.06.030
摘要

Hydrogen is an active substitute for current commercial fuels as a green energy source. However, the progress toward hydrogen economy is stalled due to a lack of efficient and economical storage systems usually restrained by the material used. Some specific issues still need to improve in recent practical hydrogen storage methods: low surface area, limited capacity to attract gas adsorbate, high-temperature medium for hydrogen desorption, and extreme reactivity towards Oxygen and air. The paper presents a study on the surface modification of silicon nanostructures (SiNSs) synthesized by chemical etching, followed by structure optimization to enhance the hydrogen storage capacity. The standard anodization method prepares porous silicon (PS) while metal-assisted chemical etching fabricates Si and Porous Si nanowires (PSiNWs) on Si and PS substrates. Morphological features like surface area and porous nature were evaluated using SEM, AFM, and BET to interpret the gas-surface interaction. The modified surface area and average roughness of SiNSs increase maximum to 437 m2 g−1 and 501 nm, respectively. The PS shows the highest gas-surface interaction (up to 86.6%) and surface energy due to uniform pore distributions and high surface area. The NMR and FTIR investigate the hydrogen termination on the surface, whereas TG-DSC indicates the desorption of surface hydrides at ∼290 °C. A rank matrix is constructed considering various adsorption-desorption and fabrication parameters to select optimized SiNS, whereas PS is selected as a suitable candidate for hydrogen storage.
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